MOSIS Layer Map for SCN4ME and SCN4ME_SUBM

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This is the layer map for the technology codes SCN4ME and SCN4ME_SUBM using the MOSIS Scalable CMOS layout rules ( SCMOS), and only for SCN4ME and SCN4ME_SUBM. For designs that are laid out using other design rules (or technology-codes), use the standard layer mapping conventions of that design rule set. For submissions in GDS format, the datatype is "0" (zero) unless specified in the map below.

SCN4ME: Scalable CMOS N-well, 4 metal, 2 poly, polycide, no silicide block, thick oxide option available.

SCN4ME_SUBM: Uses revised layout rules for better fit to sub-micron processes (see MOSIS Scalable CMOS (SCMOS) Design Rules, section 2.4).

Fabricated on TSMC 0.35 micron process runs.


Layer GDS CIF CIF Synonym Rule
Section
Notes
N_WELL 42 CWN   1  
ACTIVE 43 CAA   2  
THICK_ACTIVE 60 CTA   24 Optional
POLY 46 CPG   3
N_PLUS_SELECT 45 CSN   4  
P_PLUS_SELECT 44 CSP   4  
POLY2 56 CP2 CEL 11, 12, 13 Optional
CONTACT 25 CCC CCG 5, 6, 13  
POLY_CONTACT 47 CCP   5 Can be replaced by CONTACT
ACTIVE_CONTACT 48 CCA   6 Can be replaced by CONTACT
POLY2_CONTACT 55 CCE  

13  
Can be replaced by CONTACT.
METAL1 49 CM1 CMF 7
VIA 50 CV1 CVA 8
METAL2 51 CM2 CMS 9
VIA2 61 CV2 CVS 14  
METAL3 62 CM3 CMT 15  
VIA3 30 CV3 CVT 21  
METAL4 31 CM4 CMQ 22  
GLASS 52 COG   10
PADS 26 XP  
Non-fab layer used to highlight pads
Comments -- CX     Comments