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This is the layer map for the technology codes SCN3ME and SCN3ME_SUBM using the MOSIS Scalable CMOS layout rules (SCMOS), and only for SCN3ME and SCN3ME_SUBM. For designs that are laid out using other design rules (or technology-codes), use the standard layer mapping conventions of that design rule set. For submissions in GDS format, the datatype is "0" (zero) unless specified in the map below.
SCN3ME: Scalable CMOS N-well, 3 metal, non-silicided, high resistance layer available. Adds a second polysilicon layer (poly2) as the upper electrode of a poly capacitor.
SCN3ME_SUBM: Uses revised layout rules for better fit to sub-micron processes (see MOSIS Scalable CMOS (SCMOS) Design Rules, section 2.4).
Fabricated on AMI 0.50 micron process runs.
Layer | GDS | CIF | CIF Synonym |
Rule
Section |
Notes |
N_WELL | 42 | CWN |   | 1 | |
ACTIVE | 43 | CAA | 2 |
|
|
POLY | 46 | CPG | 3 |
|
|
N_PLUS_SELECT | 45 | CSN | 4 |
|
|
P_PLUS_SELECT | 44 | CSP | 4 |
|
|
POLY2 | 56 | CP2 | CEL | 11, 12, 13 | Optional |
HI_RES_IMPLANT | 34 | CHR | 27 | Optional | |
CONTACT | 25 | CCC | CCG | 5, 6, 13 | |
POLY_CONTACT | 47 | CCP | 5 | Can be replaced by CONTACT | |
ACTIVE_CONTACT | 48 | CCA | 6 | Can be replaced by CONTACT | |
POLY2_CONTACT | 55 | CCE |
|
13 |
Can be replaced by CONTACT. |
METAL1 | 49 | CM1 | CMF | 7 |
|
VIA | 50 | CV1 | CVA | 8 |
|
METAL2 | 51 | CM2 | CMS | 9 |
|
VIA2 | 61 | CV2 | CVS | 14 | |
METAL3 | 62 | CM3 | CMT | 15 | |
GLASS | 52 | COG | 10 |
|
|
PADS | 26 | XP |
|
Non-fab layer used to highlight pads | |
Comments | -- | CX | Comments |