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This is the layer map for the technology codes SCN4M and SCN4M_SUBM using the MOSIS Scalable CMOS layout rules ( SCMOS), and only for SCN4M and SCN4M_SUBM. For designs that are laid out using other design rules (or technology-codes), use the standard layer mapping conventions of that design rule set. For submissions in GDS format, the datatype is "0" (zero) unless specified in the map below.
SCN4M: Scalable CMOS N-well, 4 metal, 1 poly, silicided. Silicide block and thick oxide option available only on the TSMC process.
SCN4M_SUBM: Uses revised layout rules for better fit to sub-micron processes (see MOSIS Scalable CMOS (SCMOS) Design Rules, section 2.4).
Fabricated on TSMC and Agilent/HP 0.35 micron process runs. See "Notes" section of layer map for foundry-specific options.
Layer | GDS | CIF | CIF Synonym |
Rule
Section |
Notes |
N_WELL | 42 | CWN |   | 1 | |
ACTIVE | 43 | CAA | 2 | ||
THICK_ACTIVE | 60 | CTA | 24 | Optional for TSMC; not available for Agilent/HP | |
POLY | 46 | CPG | 3 |
|
|
SILICIDE_BLOCK | 29 | CSB | 20 | Optional for TSMC; not available for Agilent/HP | |
N_PLUS_SELECT | 45 | CSN | 4 | ||
P_PLUS_SELECT | 44 | CSP | 4 | ||
CONTACT | 25 | CCC | CCG | 5, 6, 13 | |
POLY_CONTACT | 47 | CCP | 5 | Can be replaced by CONTACT | |
ACTIVE_CONTACT | 48 | CCA | 6 | Can be replaced by CONTACT | |
METAL1 | 49 | CM1 | CMF | 7 |
|
VIA | 50 | CV1 | CVA | 8 |
|
METAL2 | 51 | CM2 | CMS | 9 |
|
VIA2 | 61 | CV2 | CVS | 14 | |
METAL3 | 62 | CM3 | CMT | 15 | |
VIA3 | 30 | CV3 | CVT | 21 | |
METAL4 | 31 | CM4 | CMQ | 22 | |
GLASS | 52 | COG | 10 |
|
|
PADS | 26 | XP |
|
Non-fab layer used to highlight pads | |
Comments | -- | CX | Comments |