MOSIS Layer Map for SCN3M and SCN3M_SUBM

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This is the layer map for the technology codes SCN3M and SCN3M_SUBM using the MOSIS Scalable CMOS layout rules (SCMOS), and only for SCN3M and SCN3M_SUBM. For designs that are laid out using other design rules (or technology-codes), use the standard layer mapping conventions of that design rule set. For submissions in GDS format, the datatype is "0" (zero) unless specified in the map below.

SCN3M: Scalable CMOS N-well, 3 metal, 1 poly with silicide block option available only on the Agilent/HP process.

SCN3M_SUBM: Uses revised layout rules for better fit to sub-micron processes (see section 2.4)

Fabricated on either Agilent/HP or AMI 0.50 micron process runs. See "Notes" section of layer map for foundry-specific options.


Layer GDS CIF CIF Synonym Rule
Section
Notes
N_WELL 42 CWN   1  
ACTIVE 43 CAA   2
POLY 46 CPG   3
SILICIDE_BLOCK 29 CSB   20 Optional for Agilent/HP; not available for AMI
N_PLUS_SELECT 45 CSN   4
P_PLUS_SELECT 44 CSP   4
CONTACT 25 CCC CCG 5, 6, 13  
POLY_CONTACT 47 CCP   5 Can be replaced by CONTACT
ACTIVE_CONTACT 48 CCA   6 Can be replaced by CONTACT
METAL1 49 CM1 CMF 7
VIA 50 CV1 CVA 8
METAL2 51 CM2 CMS 9
VIA2 61 CV2 CVS 14  
METAL3 62 CM3 CMT 15  
GLASS 52 COG   10
PADS 26 XP  
Non-fab layer used to highlight pads
Comments -- CX     Comments