The capacitor well described in this and the next rule only apply to SCN3MLC and SCN3MLC_SUBM technology codes manufactured on an Agilent/HP AMOS14TB run.
Rule | Description | Lambda | ||
---|---|---|---|---|
SCMOS | SUBM | DEEP | ||
17.1 | Minimum width | 10 | 12 | n/a |
17.2 | Minimum spacing | 9 | 18 | n/a |
17.3 | Minimum spacing to external active | 5 | 6 | n/a |
17.4 | Minimum overlap of active | 5 | 6 | n/a |
These rules illustrate the construction of a linear capacitor in a capacitor well. The capacitor itself is the region of overlapped poly and active. The active area is electrically connected to the cap well
Rule | Description | Lambda | ||
---|---|---|---|---|
SCMOS | SUBM | DEEP | ||
18.1 | Minimum width | 3 | 3 | n/a |
18.2 | Minimum poly extension of active | 2 | 2 | n/a |
18.3 | Minimum active overlap of poly | 3 | 3 | n/a |
18.4 | Minimum poly contact to active | 2 | 2 | n/a |
18.5 | Minimum active contact to poly | 6 | 6 | n/a |